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Ultraviolet sensing based on nanostructured ZnO/Si surface acoustic wave devices

机译:基于纳米结构的ZnO / Si表面声波器件的紫外传感

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摘要

Ultraviolet (UV) sensor based on nanostructured ZnO/Si Surface Acoustic Wave (SAW) devices is studied in this paper. The ZnO films sputtered onto Si (100) substrate showed a preferred (0002) orientation and good photoluminescence emission. For the SAW device with a wavelength of 64 um, a frequency downshift of ~ 1.4 kHz was observed at the Rayleigh mode under a UV light intensity of 0.6 mW/cm2, whereas the frequency downshift for the Rayleigh mode was increased to 8.3 kHz after integrating ZnO nanorods (NRs) in the ZnO/Si SAW devices. For the SAW device with a wavelength of 20um irradiated under a UV light intensity of 0.6 mW/cm2, a frequency downshift of 25 kHz for the Sezawa mode was obtained compared to a shift of 12 kHz for the Rayleigh mode. After depositing ZnO NRs, the resonant frequency for the Rayleigh mode was increased to 27.4 kHz under the same UV intensity illumination, due to the significant increase in surface-to-volume ratio.
机译:本文研究了基于纳米结构的ZnO / Si表面声波(SAW)器件的紫外(UV)传感器。溅射到Si(100)衬底上的ZnO薄膜表现出较好的(0002)取向和良好的光致发光发射。对于波长为64 um的SAW器件,在紫外线光强度为0.6 mW / cm2的条件下,在瑞利模式下观察到〜1.4 kHz的频率下移,而在积分后,瑞利模式下的频率下移增加到8.3 kHz ZnO / Si SAW器件中的ZnO纳米棒(NRs)。对于在0.6 mW / cm2的紫外线下照射的波长为20um的SAW器件,与瑞利模式的12 kHz偏移相比,Sezawa模式的频率下移为25 kHz。沉积ZnO NR后,由于表面体积比的显着增加,在相同的UV强度照射下,瑞利模式的共振频率增加到27.4 kHz。

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